Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx Sr0.45 Mn O3 thin films
Abstract
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.
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