Features of charge transport in Mo/n-Si structures with a Shottky barrier

Abstract

The forward and reverse current-voltage characteristics of the Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. It is found that Shottky barrier height increases and time ideality factor decreases with temperature increasing. The obtained results have been analyzed in the framework of inhomogeneous contact model. The mean and standart deviation of Shottky barrier heigh are determined: 0.872 V and 0.099 V at $=130-220 K and 0.656 V and 0.036 V at T=230-330 K respectively. It is shown that at reverse bias the main processes of current flow are the thermionic emission over an inhomogeneous barrier and tunneling.