ASNOM mapping of SiC epi-layer doping profile and of surface phonon polariton waveguiding

Abstract

The apertureless SNOM mapping of the slightly-doped 4H-SiC epitaxial layer grown on a heavily-doped 4H-SiC substrate was performed with a cleaved edge geometry. ASNOM images taken at the light frequencies of a $C^{13}O_{2}^{16}$ laser show a clear contrast between the substrate and the epitaxial layer. The contrast vanishes at the laser frequency of $884cm^{-1}$, and gets clearer at higher frequencies $(923cm^{-1})$. This can be explained by changes in the local polarizability of SiC caused by the carrier concentration, which are more pronounced at higher frequencies. Since the light frequency is tuned up further ($935cm^{-1}$), a transversal mode structure appears in the ASNOM map, indicating a waveguide-like confinement of a surface phonon polariton wave inside the strip of an epi-layer outcrop.