Quantum corrections to conductivity in Si doped ZnO thin films

Abstract

Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si concentration was increased from ~ 0.4 to 2% and then it increased with further increase in Si concentration. The electron concentrations in the films were in the range from 3x1019 to 4x1020 cm-3 showing their degenerate nature. However, temperature dependent resistivity measurements in the range from 300 to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the 0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range. The 0.6, 0.9 and 2% Si doped films showed a transition from negative to positive TCR with increasing temperature. The negative magnetoresistance found in the films at low temperatures and 0.5 T magnetic field pointed to weak localization as the dominant contributor towards negative TCR. A quantitative fit of the temperature dependent resistivity data for all the films could be obtained by considering the quantum correction to conductivity arising due to disorder induced weak localization effect.