Phonon decay in silicon nanocrystals
Abstract
The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO2 nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed.
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