Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals
Abstract
A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi+ substitutional ions and Bi2+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi.
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