Transport properties of p-type metal-oxide-semiconductor inversion layer in (110) and (111) silicon channel under uniaxial stress

Abstract

Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration effective mass, conductivity effective mass, and mobility are calculated based on Luttinger-Kohn Hamiltonian [16]. Three compact expressions of scattering rate are derived in this paper. The direction of applied uniaxial stresses considered is in either parallel or perpendicular to channel. My results show mobility is very sensitive to effective mass under different stresses. The favorable mobility directions are found in (110) system with -3 GPa stress parallel to channel and +3 GPa stress perpendicular to channel.