Hysteretic phenomena in graphene's conductivity

Abstract

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse one (caused by capture of free carriers from graphene onto localized states on graphene-substrate interface) is proposed. Possible discrimination of these two channels by variation of the gate voltage sweep rate is discussed. Our theory predictions are in good correlation with experimental data, available in literature.