In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Abstract
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time τCR shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time τt obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
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