Shot Noise in Lithographically Patterned Graphene Nanoribbons

Abstract

We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F \approx 0.4$, nearly independent of the charge density. Our shot noise results are consistent with theoretical models for disordered graphene ribbons with a dimensionless scattering strength $K_0 \approx 10$ corresponding to rather strong disorder. Close to charge neutrality, an increase in $F$ up to $\sim 0.7$ is found, which indicates the presence of a dominant Coulomb gap possibly due to a single quantum dot in the transport gap.