Study of interface phenomena in a topological-insulator/Mott-insulator heterostructure

Abstract

We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical mean-field theory, we confirm that the topological edge state penetrating into the MI region induces a heavy-fermion like mid-gap state. We further elucidate the nature of the spatially-modulated quasi-particle weight of the mid-gap state, and discuss the effects of local correlation in the TI region. The optical conductivity and the Drude weight are also computed with changing the electron tunneling near the interface.