Effects of non-uniform Mn distribution in (Ga,Mn)As
Abstract
Resonant in situ photoemission from Mn 3d states in Ga1-xMnxAs is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states for concentration as low as 2.5 %. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys.
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