Nucleation and growth of HfO2 layers on graphene by CVD
Abstract
A seed layer-free growth of HfO2 on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred from Cu to SiO2/Si substrates have different coverage with bi- and multi-layer graphene islands. We find that the distribution and number of such islands impact the nucleation and growth of HfO2 by CVD. In particular, we show that the edges and surface of densely distributed bi-layer graphene islands provide good nucleation sites for conformal CVD HfO2 layers. Dielectric constant of 16 is extracted from measurements on graphene- HfO2-TiN capacitors.
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