p-Type Zinc Oxide Spinels: Application to Transparent Conductors and Spintronics

Abstract

We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB2O4, where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo2O4 spinel. These new materials exhibit spin polarization that is ideal for spintronics applications, and broad conductivity maxima near the valence band edge that facilitate p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu2O4 exhibits high electrical conductivities near the valence band edge that, at sigma = 2 x 10^4 S/cm, are twice the maximum found for ZnCo2O4, a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor.