A one femtojoule athermal silicon modulator

Abstract

Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength division multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters, and detectors) consume too much power for the femtojouleclass links that will ultimately be required. Here, we propose, demonstrate, and characterize the first modulator to achieve simultaneous high-speed (25-Gb/s), low voltage (0.5VPP) and efficient 1-fJ/bit error-free operation while maintaining athermal operation. Both the low energy and athermal operation were enabled by a record free-carrier accumulation/depletion response obtained in a vertical p-n junction device that at 250-pm/V (30-GHz/V) is up to ten times larger than prior demonstrations. Over a 7.5{\deg}C temperature range, the massive electro-optic response was used to compensate for thermal drift without increasing energy consumption and over a 10{\deg}C temperature range, increasing energy consumption by only 2-fJ/bit. The results represent a new paradigm in modulator development, one where thermal compensation is achieved electro-optically.