Theoretical study of the isotope effects on the detachment thresholds of Si$^-$

Abstract

The isotope effects in Si$^-$ bound levels are studied using the multi-configuration Hartree-Fock ab initio approach. Large scale calculations are carried out for the $3p^3\ ^4S^o,\, ^2D^o$ and $^2P^o$ multiplets of Si$^-$ and the $3p^2\ ^3P$ multiplet of Si. We predict an anomalous isotope shift on the electron affinity, dominated by the specific mass shift, with a value of $IS(^e\!\!A)= -0.66(6)$ m$^{-1}$ for the ($30-28$) isotope pair. We also report hyperfine structure parameters for the studied multiplets. Finally, we provide the values of level electric field gradients at the nucleus that could be of interest in a study of the metastable silicon isotopes. Relativistic corrections are estimated using non-relativistic orbitals in the Breit-Pauli and fully relativistic frameworks.