A Gapless MoS$_2$ Allotrope Possessing Both Massless Dirac and Heavy Fermions

Abstract

MoS$_2$, a member of transition metal dichalcogenides (TMDs), recently emerged as one of the fastest growing two-dimensional materials due to its fascinating mechanical, thermal, electronic and optical properties. Unlike graphene which possesses massless Dirac fermions with ultra-high electron mobility, monolayer MoS$_2$ is a direct band gap semiconductor. An interesting question arises: Can monolayer MoS$_2$ also possess massless Dirac fermions with ultra-high electron mobility? Here, using first-principles calculations, we show that a monolayer MoS$_2$ allotrope, which consists of repeated square-octagon rings (abbreviated as so-MoS$_2$ to distinguish from the normal hexagonal lattice, h-MoS$_2$) possesses both massless Dirac fermions and heavy fermions. Distinct from the $p$-orbital Dirac fermions of graphene, the Dirac fermions of so-MoS$_2$ are $d$-electrons and possess Fermi velocity comparable to that of graphene. The Dirac cone structure in so-MoS$_2$ demonstrated here greatly enriches our understanding on the physical properties of TMDs and opens up new possibilities for developing novel electronic/spintronic devices.