Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers
Abstract
In this work, IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied. The behavior of the net magnetic moment mAFM in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The mAFM is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the mAFM. In the training effect, the mAFM changes continuously. This work highlights the fundamental role of the mAFM in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.
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