Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure

Abstract

The present paper discusses the influence of Tin Sulphide's grain size on the performance of ITO/PEDOT:PSS/SnS/Al structured solar cells fabricated by thermal evaporation. The grain sizes were maintained in the range of 11-18~nm by controlling the thickness of SnS films. While the open circuit voltage (Voc) was found to be a constant for this structure, Parameters such as short circuit current density (Jsc), series resistance (Rs), parallel resistance (Rp), ideality factor and the overall efficiency were found to be dependent on the SnS grain size and incident light intensity. The experimental work directly reconfirms the theoretical results and ideas raised in literature by early researchers.