Fractional Einstein relation for strongly disordered semiconductors
Abstract
A novel Einstein relation (fractional Einstein relation, FER) for the electric conduction in non-crystalline semiconductors is presented. FER and the generalized Einstein relation (GER) [Phys. Rev. E 8, 1296 (1998)] are compared to the result of the Monte Carlo (MC) simulation, and is confirmed that FER exhibits better agreement than GER. The cruial feature of FER is that it reflects the violation of the detailed balance in the coarse-grained hopping process, while it is preserved in the original Einstein relation or GER.
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