Chemical potential shift and gap-state formation in SrTiO$_{3-\delta}$ revealed by photoemission spectroscopy

Abstract

In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable changes in the electronic structure of SrTiO$_3$. Using core-level photoemission spectroscopy, we have studied the chemical potential shift ($\Delta\mu$) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO$_{3-\delta}$. The monotonous increase of the chemical potential rules out the existence of electronic phase separation in the sample. Using valence band photoemission, we have demonstrated the formation of a low density of states at the near Fermi level electronic spectrum of SrTiO$_{3-\delta}$. The gap-states were observed by spectral weight transfer over a large energy scale of the stoichiometric band gap of SrTiO$_3$ system leading finally to an insulator - metal transition. We have interpreted our results from the point of structural distortions induced by oxygen vacancies.