Efficient Control of the Rashba Effective Magnetic Field Using Acceptor Doped Quantum Wells

Abstract

To induce a strong Rashba effective magnetic field and enhance its sensitivity to an external electric field, we propose acceptor doping in quantum wells. The acceptors are doped at the center of the well, and donors are doped in the barrier layers to compensate the acceptors and induce conduction electrons. In strongly doped wells, the electric field on these conduction electrons is easily changed by a weak external electric field, by virtue of the strong internal electric field between the acceptors and donors and the resulting high triangle potential barrier induced in the well. As a result, the Rashba effective magnetic field, proportional to the electric field on the electrons, is quite sensitive to the external electric field. Numerical calculations demonstrate that the sensitivity of the Rashba field is larger by two orders of magnitude than that in undoped wells.