The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
Abstract
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, ns, the effective mass has been found to grow with decreasing ns, obeying the relation m*/mb=ns/(ns-nc), where mb is the electron band mass and nc~0.54*1011 cm-2. In samples with maximum mobilities ranging between 90 and 220 m2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.