Planar Hall effect in Y3Fe5O12(YIG)/IrMn films
Abstract
The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y3Fe5O12) was measured in the magnetic field rotating in the film plane. The magnetic field angle dependence of planar Hall resistance (PHR) has been observed in YIG/IrMn bilayer at different temperatures, while the GGG/IrMn (GGG= Gd3Ga5O12) shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by FM in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn films at 10 K, indicating the irreversible switching of IrMn interfacial spins at low temperature.
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