The examination of stable charge states of vacancies in Cu2ZnSnS4

Abstract

The stable charge states of vacancies in the solar cell absorber material Cu2ZnSnS4 are investigated using Kohn-Sham (KS) defect-induced single particle levels analysis by concerning the screened Coulomb hybrid functional. We found out that the Cu, Zn and S vacancies (denoted by VCu, VZn, VS) do not induce single particle defect levels in the vicinity of the band gap thus each of them has only one stable charge state corresponding to the fully occupied valence band VCu1-, VZn2- and VS0, respectively (and therefore cannot account for any defect transition energy levels). The Sn vacancy (VSn) has three stable charge states VSn2-, VSn3- and VSn4-, which may account for two charge transition energy levels. By comparing with previous charge transition energy levels studies, our results indicate that the examination of stable charge states is a necessary and important step which should be done before charge transition energy levels calculations.