Electron Paramagnetic Resonance of Mn in Bi2Se3 Topological Insulator
Abstract
Electron paramagnetic resonance was used to investigate Mn impurity in Bi2Se3 topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn2+ configuration, was detected regardless of the conductivity type of the host material. This means that Mn2+(d5) energy level is located within the valence band, and Mn1+(d6) energy level is outside the energy gap of Bi2Se3. The electron paramagnetic resonance spectrum of Mn2+ in Bi2Se3 is characterized by the isotropic g-factor |g| = 1.91 and large axial parameter D = -4.20 GHz x h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz x h and 16.8 GHz x h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi2Se3 acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity.