Incorporation of Mn in AlxGa1-xN probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations
Abstract
Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in AlxGa1-xN:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for AlxGa1-xN:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.
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