DC thermal modeling of CNTFETs based on a semi-empirical approach

Abstract

A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the validity of the proposed thermal model, the simulations were performed in very different thermal conditions, obtaining I-V characteristics perfectly coincident with those of other models. The very low CPU calculation time makes the proposed model particularly suitable to be implemented in CAD applications.