Preventing rapid energy loss from electron-hole pairs to phonons in graphene quantum dots

Abstract

In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic states below the fundamental band gap. This possibility for a large transition energy to bound excitons is due to graphene's poor screening, illustrating a unique mechanism in this QD to occupy higher-energy states for long timescales. GQD edges can be terminated with either armchair or zigzag carbon patterns, and this edge structure changes excited state lifetimes by orders of magnitude. These results indicate nanoscale control of carrier lifetimes in optoelectronics.