CuSbSe2 photovoltaic devices with 3% efficiency
Abstract
Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe2, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe2 PV prototypes prepared at 380-410C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe2 absorber has a 1.1 eV optical absorption onset, ~105 cm-1 absorption coefficient at 0.3 eV above the onset, and a hole concentration of ~1017 cm-3. The promising >3% energy conversion efficiency (Jsc = 20 mA/cm2, FF = 0.44, Voc = 0.35 V) in these initial devices is limited by bulk recombination that limits photocurrent, device engineering issues that affect fill factor, and a photovoltage deficit that likely results from the non-ideal CuSbSe2/CdS band offset.
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