Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures

Abstract

We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D crystal synthesis, i.e. reagent-limited nucleation near an aperture edge followed by reactions that allow crystal growth into the free-space of the aperture. Such an approach enables us, for the first time, the direct and selective growth of freestanding membranes of atomically thin MoS2 layers across micrometer-scale pre-fabricated solid-state apertures in SiNx membranes. Under optimal conditions, MoS2 grows preferentially across apertures, resulting in sealed membranes that are one to a few atomic layers thick. Since our method involves free-space growth and is devoid of either substrates or transfer, it is conceivably the most contamination-free method for obtaining 2D crystals reported so far. The membrane quality was investigated using atomic-resolution transmission electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, and low-noise ion-current recordings through nanopores fabricated in such membranes.