Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)
Abstract
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001) oriented single crystal. The subsequent Al film grows almost 111 oriented in a fibre texture although the underlying Fe3Si is exactly (001) oriented. The growth in this orientation is triggered by a thin transition region which is formed at the Fe3Si/Al interface. In the end after the growth of the second Fe3Si layer on top of the Al the final properties of the whole stack depend on the substrate temperature TS during deposition of the last film. The upper Fe3Si films are mainly 110 oriented although they are poly-crystalline. At lower TS, around room temperature, all the films retain their original structural properties.
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