Native point defects in CaS: A focus on doping limit for persistent luminescence

Abstract

We studied native point defects in CaS by DFT+ Hubbard U method. The effect of the localization of the d orbitals of Ca pseudopotential has been included. The Hubbard U corrected d-orbital for Ca sites are playing a role assisting the charge transfer from p orbitals of S site to the Ca site, giving both localized electron and hole states within the band gap, with an energy interval of 1.2~1.4 eV. This corresponds to the localized excitonic levels below the conduction band edge for the optical absorption. The electronic properties and formation energies of native point defects have been discussed. We found the neutral S vacancy has the lowest energy of 0.62 eV under Ca-rich limit. The Schottky defect pair defect is another dominant defect with cost of 1.51 eV per defect site from S-rich to Ca-rich chemical potential limits. The defect formation energy further summarized that the doubly positive S vacancy and doubly negative Ca vacancy are both the most stable donor-type and acceptor-type defects respectively coexisting in CaS. We also summarized a narrow doping limit energy which has been determined as 1.33 eV constantly in CaS independent to different chemical potential limits. But such doping allowed range entirely shifts from valence band vicinity toward the conduction band edge from S-rich to Ca-rich limits. Under S-rich limit, the dopable range for EF shifting corresponds to Eu2+ doping experiments, the luminescence wavelength limit is predicted to be 659 nm (1.88 eV) remarkably close to the reported results 650 nm. This gives a solid theoretical reference for the lanthanide ions doping experiments in CaS. We conclude that the defect levels combined with formation energy is an accessible way to suggest the doping energy range and an assistant to explain the activation stage of photostimulated luminescence (PSL) mechanism in lanthanide ions doped crystal materials.