Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots

Abstract

GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to $60\%$ achieved. NMR spectroscopy reveals the structure of two types of quantum dots and yields the small magnitude of residual strain $\epsilon_b<0.02\%$ which nevertheless leads to long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclear spin environment is advantageous for applications in quantum information processing.