A comprehensive analysis of the (R13xR13)R13.9 type II structure of silicene on Ag(111)
Abstract
In this paper, using the same geometrical approach than for the (2R3x2R3) R30 structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9 type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (R13xR13)R13.9 type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by Scanning Tunneling Microscopy and by Low Energy Electron Diffraction, shows a good agreement with the geometrical model.
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