A novel structure designed for high density nonvolatile memory devices

Abstract

The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to high-k materials, while keeping the structure as before, is not a good solution. Based on our analysis, we proposed a novel structure, in which charges are injected from top gate electrode. In this structure, high charge injection, large memory window and long retention time can be expected.