Effective doublon and hole temperatures in the photo-doped dynamic Hubbard model

Abstract

Hirsch's dynamic Hubbard model describes the effect of orbital expansion with occupancy by coupling the doublon operator to an auxiliary boson. We use the nonequilibrium dynamical mean field method to study the properties of doublon and hole carriers in this model in the strongly correlated regime. In particular, we discuss how photodoping leads to doublon and hole populations with different effective temperatures, and we analyze the relaxation behavior as a function of the boson coupling and boson energy. In the polaronic regime, the nontrivial energy exchange between doublons, holes and bosons can result in a negative temperature distribution for the holes.