Electron-phonon-averaged approximation for first-principles computations of electron relaxation times and transport properties in semiconductor materials

Abstract

We present a simple and efficient approximation to the electron-phonon scattering rate suitable for high-throughput screening of candidate materials for thermoelectric devices, based on electronic transport. The method is applied to calculate the electronic transport coefficients of half-Heusler compounds, showing agreement with experimental data. By directly computing electrical and the electronic part of the thermal conductivities, we find deviations from the Wiedemann-Franz law in these compounds at high temperatures and low carrier concentrations.