Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures
Abstract
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states. And the directly switching between any resistance states was realized. This increases the operation speed and lowers the complexity of control circuit of multi-state nonvolatile memory.
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