Energy Level Engineering in Inx Ga(1-x) As/GaAs Quantum Dots Applicable to QD-Lasers by Changing the Stoichiometric Percentage
Abstract
Band edge and energy levels of truncated pyramidal Inx Ga(1-x) As/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that enhancement of indium percentage decreases the band gap and the recombination energy of electrons and holes. Our principal result is that decrease of recombination energy and band gap is nonlinear and the slopes are different band gap and e-h recombination energy. In addition, it is proved that strain tensor is diagonal along z-axis and the absolute value of the components gets larger by more indium inclusion. Our results appear to be in very good consonance with similar studies. Keywords: quantum dot, band structure, strain tensor, indium percentage.
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