Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three dimensional indium oxide thick films

Abstract

In three dimensional (3D) disordered metals, the electron-phonon (\emph{e}-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (\emph{e}-\emph{e}) scattering rate $1/\tau_\varphi$ as a function of temperature $T$ in 3D disordered metal has not been fully tested thus far, though it was proposed 40 years ago [A. Schmid, Z. Phys. \textbf{271}, 251 (1974)]. We report here the simultaneous observation of small- and large-energy-transfer \emph{e}-\emph{e} scattering in 3D indium oxide thick films. In temperature region of $T\gtrsim100$\,K, the temperature dependence of resistivities curves of the films obey Bloch-Gr\"{u}neisen law, indicating the films possess degenerate semiconductor characteristics in electrical transport property. In the low temperature regime, $1/\tau_\varphi$ as a function of $T$ for each film can not be ascribed to \emph{e}-ph scattering. To quantitatively describe the temperature behavior of $1/\tau_\varphi$, both the 3D small- and large-energy-transfer \emph{e}-\emph{e} scattering processes should be considered (The small- and large-energy-transfer \emph{e}-\emph{e} scattering rates are proportional to $T^{3/2}$ and $T^2$, respectively). In addition, the experimental prefactors of $T^{3/2}$ and $T^{2}$ are proportional to $k_F^{-5/2}\ell^{-3/2}$ and $E_F^{-1}$ ($k_F$ is the Fermi wave number, $\ell$ is the electron elastic mean free path, and $E_F$ is the Fermi energy), respectively, which are completely consistent with the theoretical predications. Our experimental results fully demonstrate the validity of theoretical predications concerning both small- and large-energy-transfer \emph{e}-\emph{e} scattering rates.