Resonance-enhanced waveguide-coupled silicon-germanium detector

Abstract

A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.