Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress

Abstract

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators.