Model for computing kinetics of the graphene edge epitaxial growth on copper
Abstract
A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island's edge advancement on Cu[111] and Cu[100] surfaces is computed as a function of the growth temperature and pressure. Spatially resolved concentration profiles of the atoms and dimers are determined, and the contributions provided by these species to the growth speed are discussed. Island growth in the conditions of a thermal cycling is studied.
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