Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations
Abstract
Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, Rxx, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ0. Here, we suggest a microwave frequency dependence of θ0 (f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.
0
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.