Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb2Te3/Bi2Te3 Heterojunctions
Abstract
Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi2Te3, Sb2Te3, Bi2Se3 and Sb2Se3 with uniaxial and biaxal strain, which show metallic and insulating phases, both topologically trivial and non-trivial. In particular, uniaxial tension can drive Sb2Te3 into a topologically trivial insulating phase. Thus, we propose a Sb2Te3/Bi2Te3 heterojunction in which a topological interface state arises in the common gap of this topological insulator-normal insulator heterojunction that can be switched on or off by means of uniaxial strain. This interface state is confined in the Sb2Te3 subsystem and is physically protected from ambient impurities. Therefore, Sb2Te3/Bi2Te3 heterojunctions can host robust helical interface states with promising spintronic applications.
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