Large thermopower in the antiferromagnetic semiconductor BaMn2Bi2
Abstract
We report electrical and thermal transport properties of Mn-based material BaMn2Bi2 with ThCr2Si2 structure. The resistivity of the antiferromagnetic BaMn2Bi2 shows a metal-semiconductor transition at 80 K with decreasing temperature. Correspondingly, the thermopower S shows a peak at the same temperature, approaching ~150 μV/K. With increasing temperature S decreases to about 125 μV/K at the room temperature. The magnetic field enhances the peak value to 210 μV/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metal-semiconductor transition temperature.
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.