Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Abstract

The Moir\'e structure of epitaxial graphene mono layer grown on 6H-SiC(0001) has been investigated recently by grazing incidence fast atom diffraction, and the results were compared with the calculation of the structure ab initio and exact diffraction codes. We review these results and present a complementary approach using the Hard Wall Model to extract information without any a priori. Reversely, taking advantage of previous exact calculations we evaluate quantitatively the performance of this simplified approach by comparing predictions using the same potential energy surface.

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