Interfacial instability of a planar interface and diffuseness at the solid-liquid interface for pure and binary materials

Abstract

Topographical and diffuse interface reconfigurations occur with a change in the solidification rate. In this article we pursue the hypothesis that the interface configuration during solidification is determined by the rate of entropy production in the region between a rigorous solid and rigorous liquid phase. We posit that when an interface begins to migrate, there are several stable configurations that are possible. These include atomistically-planar, diffuse-planar, facet non-planar and cellular non-planar. The configuration and topographical condition that affords the maximum entropy production rate (MEPR) yields the most stable interface configuration. The principle of MEPR is applied to (1) describe atomistically smooth and diffuse interfaces, (2) provide quantitative results for the diffuse interface thickness and the number of pseudo-atomic layers in the interface region, and (3) predict the transition from planar to a non-planar facet or non-facet cellular morphology as a function of solidification velocity or temperature gradient. Numerous experimental investigations spanning over sixty years have failed to comprehensively validate any of the existing solid-liquid interface (SLI) growth instability models. With the MEPR model, for the first time, breakdown conditions are predicted with a fair degree of accuracy for a number of binary alloys where no previous theoretical model had predictability. The model considers steady state solidification at close-to and far-from equilibrium conditions.