Stable topological insulators achieved using high energy electron beams

Abstract

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.